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| 2SC1907 Silicon NPN Epitaxial Planar Application www..com UHF TV Tuner, Local oscillator Outline TO-92 (2) 1. Emitter 2. Collector 3. Base 3 2 1 2SC1907 Absolute Maximum Ratings (Ta = 25C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature www..com Symbol VCBO VCEO VEBO IC IE PC Tj Tstg Ratings 30 19 2 50 -50 300 150 -55 to +150 Unit V V V mA mA mW C C Electrical Characteristics (Ta = 25C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 30 19 2 -- 40 -- -- 900 * Typ -- -- -- -- -- 0.2 1.0 1100 10 8 Max -- -- -- 0.5 -- 1.0 2.0 -- 25 -- Unit V V V A Test conditions I C = 10 A, IE = 0 I C = 3 mA, RBE = I E = 10 A, IC = 0 VCB = 10 V, IE = 0 VCE = 10 V, IC = 10 mA Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Collector output capacitance Gain bandwidth product Base time constant Oscillation output power V(BR)EBO I CBO hFE VCE(sat) Cob fT rbb' Pout CC V pF MHz ps mW I C = 20 mA, IB = 4 mA VCB = 10 V, IE = 0, f = 1 MHz VCE = 10 V, IC = 10 mA VCB = 10 V, IC = 10 mA, f = 31.8 MHz VCB = 10 V, IC = 10 mA, f = 930 MHz -- -- 2 2SC1907 Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 300 Collector Current IC (mA) Typical Output Caracteristics 20 0 13 PC 16 200 12 8 120 110 100 90 80 70 60 50 = 30 0 m W 100 4 40 30 20 IB = 10 A 4 8 12 16 20 0 www..com 100 150 50 Ambient Temperature Ta (C) 0 Collector to Emitter Voltage VCE (V) Typical Transfer Caracteristics 20 VCE = 10 V DC Current Transfer Ratio hFE 200 DC Current Transfer Ratio vs. Collector Current VCE = 10 V 160 Collector Current IC (mA) 16 12 120 8 80 4 40 0 0.2 0.4 0.6 0.8 1.0 0 0.1 0.2 0.5 1.0 2 5 10 20 50 Base to Emitter Voltage VBE (V) Collector Current IC (mA) 3 2SC1907 Gain Bandwidth Product vs. Collector Current 1,200 Gain Bandwidth Product fT (MHz) Base Time Constant rbb'*CC (ps) 1,000 800 600 400 200 VCE = 10 V 200 100 50 20 10 5 VCB = 10 V f = 31.8 MHz Base Time Constant vs. Collector Current 0 0.2 www..com 0.5 1.0 2 5 10 20 50 100 2 0.1 0.2 0.5 1.0 2 5 10 Collector Current IC (mA) Collector Current IC (mA) Input Admittance Characteristics 0 Input Suceptance bib (mS) -10 -20 -30 -40 -50 -60 0 5 10 15 20 25 30 1,200 MHz 1,000 900 800 yib = gib+jbib Reverse Transfer Admittance Characteristics yrb = grb+jbrb Reverse Transfer Suceptance brb (mS) 0 400 MHz 600 -1 -2 -3 -4 5m A 600 IC = 10 15 mA mA VCB = 10 V Output end short 5 mA 400 VCB = 10 V Input end short 800 900 1,000 m 15 A mA 1,200 -6 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0 Input Conductance gib (mS) Reverse Transfer Conductance grb (mS) 4 IC 10 -5 = 2SC1907 Forward Transfer Admittance Characteristics Forward Transfer Suceptance bfb (mS) 60 50 40 30 20 10 VCB = 10 V Output end short 800 900 1,000 400 MHz IC A 5m =1 Output Admittance Characteristics 15 yob = gob+jbob Output Suceptance bob (mS) 1,200 yfb = gfb+jbfb 10 m 5m A 10 A 600 1,000 900 800 600 400 MHz VCB = 10 V Input end short 5 1,200 0 10 20 30 -30 -20 -10 0 www..com Forward Transfer Conductance gfb (mS) IC = 5 10 mA 15 mA mA 0 1.5 3.0 4.5 6.0 7.5 Output Conductance gob (mS) 5 Unit: mm 4.8 0.3 3.8 0.3 2.3 Max 0.45 0.1 www..com 0.7 0.60 Max 12.7 Min 5.0 0.2 0.5 1.27 2.54 Hitachi Code JEDEC EIAJ Weight (reference value) TO-92 (2) Conforms Conforms 0.25 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. www..comapplication so that the product is used within the ranges guaranteed by Hitachi particularly 4. Design your for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. |
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